[1] S. Hoffmann, J. R. Ojha, A. Thiede, R. Leblanc*, B. Wroblewski*:
7 VPP Modulator-Driver for 40 Gbit/s Optical Communications
European Gallium Arsenide Application Symp., 2002, Milan/Italy, pp.181-184
* OMMIC,
Limeil-Brévannes/France
[2] L. Möller*,
Z. Gu, A. Thiede, S. Chandrasekhar*, L. Stulz*:
20 Gb/s electrical data recovery using a decision
feedback equalizer supported receiver
Electronics Letters, vol.39(
*
[3] R. Leblanc*, A. Gasmi*, M. Zahzouh*, D. Smith*, F. Auvray*, J. Moron*, J. Hourany*, D. Demange*, A. Thiede, M. Rocchi*:
GaAs
PHEMT Chip Sets and IC Processes For High-End Fiber Optic Applications
Invited
Paper for special issue of International Journal of High Speed Electronics and
Systems, "Compound Semiconductor Integrated Circuits", Selected
Topics in Electronics and Systems, vol.29, pp.91-110, World Scientific
Publishing
* OMMIC,
Limeil-Brévannes/France
[4] S. Hoffmann,
A. Thiede, P. Tommasino*, A. Trifiletti*, A. Vannucci**:
Measurement-based models of a 40 Gb/s modulator and
its electrical driver for joint transmitter design
European Gallium Arsenide
Application Symp.,
* University La Sapienza Roma/Italy, ** Corning OTI Milan/Italy
[5] Z. Gu, A. Thiede,
L. Möller*:
20 Gbit/s Decision Feedback
European Gallium Arsenide Application Symp.,
* Lucent Technologies Holmdel-Keyport/United States
[6] Z. Gu, B. Bartsch,
A. Thiede, R. Tao*, Z.-G. Wang**:
Fully Integrated 10 GHz CMOS LC VCOs
European Microwave Conference,
*Stuttgart University/Germany,
**
[7] S. Hoffmann,
A. Thiede, P. Tommasino*, A. Trifiletti*, A. Vannucci**:
Measurement-Based Models of a 40 Gb/s Modulator
and It's Electrical Driver for Transmitter Design
IEE Proc.-Circuits Devices Systems, vol.152(
* University La Sapienza Roma/Italy, ** Corning OTI Milan/Italy
[8] Z. Gu,
A. Thiede:
18 GHz Low-Power CMOS Static Frequency Divider
Electronics Letters, vol.39(
[9] R. Tao*,
M. Berroth*, Z. Gu, Z.-G. Wang**:
Wideband fully differential CMOS transimpedance
preamplifier
Electronics Letters, vol.39(
*Stuttgart University/Germany, **
[10] Z. Gu,
A. Thiede:
Design of High-Speed CMOS ICs for 10 Gbit/s Optical
Communication System
Joint Symposium on Opto- & Microelectronic Devices
and Circuits, Wuhan/China,
[11] Z. Gu, A. Thiede, R. Tao*:
CMOS Wideband Amplifier with an Active Shunt Peaking
Technique
Joint Symposium on Opto- & Microelectronic Devices
and Circuits, Wuhan/China,
*
Stuttgart University/Germany
[12] L. Wang, Z. Gu, A. Thiede,
G. Wang*, R. Kraemer*, L. Möller**:
An Improved Decision Feedback
Joint Symposium on Opto- & Microelectronic Devices
and Circuits, Wuhan/China,
* IHP
GmbH Frankfurt(Oder), Germany,
** Lucent Technologies Holmdel-Keyport/United States
[13] B. Milivojevic,
S. Hoffmann, A. Thiede, R. Noé,
R. Leblanc*, B. Wroblewski*:
Distributed Amplifiers for Transmitter and Receiver of
a 40 Gbit/s DPSK Optical Transmission System
European Gallium Arsenide Application Symp., Amsterdam/Netherlands,
* OMMIC, Limeil-Brévannes/France
[14] Z. Gu, A. Thiede:
Cascaded
Quality Factor of Ring LC Oscillators
12th
IEEE Int. Symp. on Electron Devices for Microwave and
Optoelectronic Applications, Berg-en.Dal, Kruger
National Park/South Africa,
[15] Z. Gu, A. Thiede, Li Wang:
Source Capacitively Coupled Compensation Technique and
Its Applications
12th
IEEE Int. Symp. on Electron Devices for Microwave and
Optoelectronic Applications, Berg-en.Dal, Kruger
National Park/South Africa,
[16] Z. Gu,
A. Thiede:
10 GHz full-rate clock and data recovery circuit in
0.18 µm CMOS without external
reference clock
Electronics Letters, vol.40(
[17] S. Hoffmann,
A. Thiede, P. Tommasino*, A. Trifiletti*, A. Vannucci**:
Measurement-Based Models of a 40 Gb/s Modulator
and It's Electrical Driver for Transmitter Design
IEE
Proc.-Circuits Devices Syst., vol.152(2005), no.2, pp.165-170
* University La Sapienza Rome/Italy, ** Corning OTI Milan/Italy
[18] L. Wang, J. Borngraeber*,
G. Wang*, A. Thiede:
Low-Power 71 GHz Static Frequency Divider in SiGe:C HBT Technology
IEEE International Microwave Symposium, Long
Beach/USA,
* IHP
GmbH Frankfurt(Oder)/Germany
[19] I.
A Novel Approach for RF/Microwave Modelling and
Optimization of BGA Packages
IEEE Conf. on Ph.D. Research in Microelectronics and
Electronics, Lausanne/Switzerland,
* FhG-IZM Berlin/Germany
[20] B. Milivojevic,
Z. Gu, A. Thiede:
10 Gbit/s Differential Amplifier Demonstrating Striplines in 0.18µm CMOS Technology
European Gallium Arsenide Application Symp., Paris/France, 2005, pp.85-87
[21] Z. Gu,
A. Thiede:
10 GHz
Low-Noise Low-Power Monolithic Integrated VCOs in Digital CMOS Technology
IEICE
Trans. on Electronics, vol.E89-C(2006), no.1, pp.88-93
[22] L. Wang*, Y.-M. Sun*,
J. Borngräber*, A. Thiede, R. Kraemer*:
Low Power Frequency Dividers in SiGe:C
BiCMOS Technology,
IEEE 6th Topical Meeting on Silicon Monolithic
Integrated Circuits in RF Systems, San Diego/USA, 2006, pp.357-360
* IHP
GmbH Frankfurt (Oder)/Germany
[23] P. Monsurro*,
A. Thiede, A. Trifiletti*:
Design of a 10 GSps
5 bit flash A/D converter,
German Microwave Conference,
Karlsruhe/Germany, 2006
* University La Sapienza Rome/Italy
[24] D. B. Venkatesha*, S. Chitrashekaraiah*,
A. A. Rezazadeh*, A. Thiede:
Interpreting InGaP/GaAs
DHBT eye diagrams using small signal parameters
European Microwave Integrated Circuit Conf.,
* The
[25] Y. Cao,
V. Issakov, M. Tiebout:
A 2kV
ESD-Protected 18GHz LNA with 4dB NF in 0.13µm CMOS
IEEE
Int. Solid-State Circuits Conf., San Francisco/USA, 2008, pp.194-195
[26] V. Issakov, A. Thiede,
V. Winkler*:
An Analytical Insight on the Frequency Behavior of
Rat-Race Coupler
German Microwave Conference, Hamburg/Germany, 2008, pp.82-85
* DICE GmbH, Linz/Austria
[27] V. Issakov,
M. Wojnowski*, A. Thiede, L. Maurer**:
An Extension of Thru De-embedding Technique for
Characterization ofAsymmetrical and Differential
Devices
German Microwave Conference, Hamburg/Germany, 2008,
pp.221-224
* Infineon Technologies AG, Munich/Germany
** DICE GmbH, Linz/Austria
[28] N. Uddin,
M. Spang*, A. Thiede:
Miniature
German Microwave Conference, Hamburg/Germany, 2008,
pp.348-351
*
Friedrich-Alexander University, Erlangen-Nuremberg/Germany
[29] V. Issakov, A. Thiede, K. Büyüktas*, W. Simbürger*, L. Maurer**:
Fast and Efficient Analytical Parameters Fitting for
On-Chip Inductors
German Microwave Conference, Hamburg/Germany, 2008,
pp.487-490
* Infineon Technologies AG, Munich/Germany
** DICE GmbH, Linz/Austria
[30] V. Issakov,
M. Tiebout*, Y. Cao**, A. Thiede,
W. Simbürger**:
A Low Power 24 GHz LNA in 0.13 µm CMOS
IEEE COMCAS, Tel-Aviv/Israel, May 2008, pp. 1-10
* Infineon Technologies AG, Villach/Austria
** Infineon Technologies AG, Munich/Germany
[31] V. Issakov,
A. Thiede, M. Wojnowski*, K. Büyüktas*, W. Simbürger*:
Fast Analytical Parameters Fitting of Planar Spiral
Inductors
IEEE COMCAS, Tel-Aviv/Israel, 2008, pp.1-10
* Infineon Technologies AG, Munich/Germany
[32] M. Wojnowski*, M. Engl*,
V. Issakov, G. Sommer*, R. Weigel**:
Accurate broadband RLCG-parameter extraction with TRL
calibration
IEEE Microwave Symposium MTT-S (IMS), Atlanta/USA,
2008, pp. 41-46
*
Infineon Technologies AG, Munich/Germany
**
Friedrich-Alexander University, Erlangen-Nuremberg/Germany
[33] V. Issakov,
D. Johnsson*, Y. Cao*, M. Mayerhofer*, M. Tiebout**,
W. Simbürger*, L. Maurer***:
ESD Concept for High-Frequency Circuits
30th Annual EOS/ESD Symposium, Tucson/USA,
2008, pp. 3A.4-1-7
* Infineon Technologies AG, Munich/Germany
** Infineon Technologies AG, Villach/Germany
*** DICE GmbH, Linz/Austria
[34] Y. Cao*,
M. Tiebout**, V. Issakov
A 24GHz FMCW Radar Transmitter in 0.13 µm CMOS
European Solid-State Circuits Conference, Edinburgh/UK,
2008, pp. 498-501
* Infineon Technologies AG,
** Infineon Technologies AG,
[35] A.S. Awny,
A. Thiede, J.C. Scheytt*:
Relaxation of Timing Constraints in DFEs for
100 Gb/s Optical Communication,
Kleinheubacher
Tagung, 2008, Miltenberg/Germany
[36] S. Halder*, H. Gustat*,
C. Scheytt*, A. Thiede:
A 20 GS/s 8-Bit Current Steering DAC in 0.25 µm SiGe BiCMOS Technology
European Microwave Integrated Circuit Conf.,
Amsterdam/Netherlands, 2008, pp.147-150
* IHP
GmbH Frankfurt (Oder)/Germany
[37] N. Uddin, M. Spang*,
A. Thiede:
Integrated Magnetic
European Microwave Conf., Amsterdam/Netherlands, 2008,
pp.1070-1073
*
Friedrich-Alexander University, Erlangen-Nuremberg/Germany
[38] V. Issakov, H. Knapp*, M. Wojnowski*, A. Thiede, W. Simbürger*,
G. Haider**, L. Maurer**:
ESD-protected 24 GHz LNA for Radar Applications in SiGe:C Technology
9th IEEE Topical Meeting on Silicon
Monolithic Integrated Circuits in RF Systems (SiRF),
San Diego/USA, 2009, pp.49-52
* Infineon Technologies AG, Munich/Germany
** DICE GmbH, Linz/Austria
[39] V. Issakov,
A. Thiede, L. Verweyen*, M. Tiebout**:
A 0.5-25 GHz Inductorless
Single-Ended Resistive Mixer in 0.13 μm CMOS
Electronics Letters, vol.45(2009), no.2, pp.108-109
*
Infineon Technologies AG, Munich/Germany
**
Infineon Technologies AG, Villach/Austria
[40] V. Issakov, A. Thiede, L. Verweyen*, L. Maurer*:
Wideband Resistive Ring Mixer for Automotive and
Industrial Applications in 0.13 μm CMOS,
German Microwave Conference, Munich/Germany,
2009, no.8B-3
* Infineon Technologies AG, Munich/Germany
** DICE GmbH, Linz/Austria
[41] A.S. Awny,
A. Thiede, C. Scheytt*:
mm-Wave and Logic Acceleration Techniques for
100 Gbit Decision Feedback Equalizer
German Microwave Conference, Munich/Germany,
2009, no.5C-12
* IHP
GmbH Frankfurt (Oder)/Germany
[42] M. Spang*, *, N. Uddin,
A. Thiede:
German Microwave Conference, Munich/Germany,
2009, no.1A-1
*
Friedrich-Alexander University, Erlangen-Nuremberg/Germany
[43] V. Issakov,
M. Wojnowski*, A. Thiede, L. Maurer**:
Extension of Thru De-Embedding Technique for Assymmetrical and Differential Devices
IET Circuits, Devices & Systems, vol.3(2009),
no.2, pp.91-98
* Infineon Technologies AG, Munich/Germany
** DICE GmbH, Linz/Austria
[44] N. Uddin,
M. Spang*, T. Mager**,
A. Thiede:
Integrated Active Sensors for Near-Field Scanning
Int. Symp. on Theoretical
Electrical Engineering, Luebeck/Germany, 2009, pp.
398-402
*
Friedrich-Alexander University, Erlangen-Nuremberg/Germany
** Fraunhofer Institution for Electronic Nano Systems,
[45] N. Uddin,
A. Thiede:
Common Gate Cross-Coupled Differential Amplifier for
Near-Field Sensors
Electronics Letters, vol.45(2009), no.18, pp.918-920
[46] V. Issakov, H. Knapp*, F. Magrini*, A. Thiede, W. Simbürger*,
L. Maurer**:
Low-Noise ESD-protected 24 GHz Receiver for Radar
Applications in SiGe:C Technology
European Solid-State Circuits Conf., Athens/Greek,
2009, pp.308-311
* Infineon Technologies AG, Munich/Germany
** DICE GmbH, Linz/Austria
[47] N. Uddin,
M. Spang*, T. Mager**,
A. Thiede:
Integrated Active Near-Field Sensor in GaAs Technology
European Microwave Integrated Circuit Conf.,
Rome/Italy, 2009, pp.278-281
*
Friedrich-Alexander University, Erlangen-Nuremberg/Germany
** Fraunhofer Institution for Electronic Nano Systems,
[48] V. Issakov, H. Knapp*, M. Tiebout**, A. Thiede, W. Simbürger*,
L. Maurer***:
Comparison of 24 GHz Low-Noise Mixers in CMOS and SiGe:C Technologies
European Microwave Integrated Circuit Conf.,
Rome/Italy, 2009, 184-187
* Infineon Technologies AG, Munich/Germany
** Infineon Technologies AG, Villach/Austria
*** DICE GmbH, Linz/Austria
[49] V. Issakov,
M. Wojnowski*, A. Thiede, R. Weigel**:
Considerations on the De-embedding of Differential
Devices Using Two-Port Techniques
European Microwave Conf., Rome/Italy, 2009, pp.695-698
*
Infineon Technologies AG, Munich/Germany
**
Friedrich-Alexander University, Erlangen-Nuremberg/Germany
[50] V. Issakov,
M. Tiebout*, K. Mertens*, Y. Ca**,
A. Thiede, W. Simbürger**,
L. Maurer***:
A Compact Low-Power 24 GHz Transceiver for Radar
Applications in 0.13 µm CMOS
IEEE COMCAS, Tel Aviv/Israel, 2009, 1D3.4
*
Infineon Technologies AG, Villach/Austria
**
Infineon Technologies AG, Munich/Germany
*** DICE
GmbH, Linz/Austria
[51] V. Issakov, M. Wojnowski*,
A. Thiede, V. Winkler***, M. Tiebout**,
Werner Simbürger*:
Considerations on the Measurement of Active
Differential Devices Using Baluns
IEEE COMCAS, Tel Aviv/Israel, 2009, 2C1.3
* Infineon Technologies AG, Munich/Germany
** Infineon Technologies AG, Villach/Austria
*** EADS, Ulm/Germany
[52] V.
Issakov, D. Siprak*, M. Tiebout**, A. Thiede, W. Simbürger*, L. Maurer***:
Comparison of 24 GHz receiver front-ends using active
and passive mixers in CMOS
IET Circuits, Devices & Systems, vol.3(2009),
no.6, pp.340-349
* Infineon Technologies AG, Munich/Germany
** Infineon Technologies AG, Villach/Austria
*** DICE GmbH, Linz/Austria
[53] A.S. Awny,
A. Thiede, M. Elkhouly*, J. Borngräber*,
F. Korndörfer*, J.C. Scheytt*:
Mixed-Signal Techniques in
10th IEEE Topical Meeting on Silicon Monolithic
Integrated Circuits in RF Systems (SiRF), New Orleans/USA,
2010, pp.80-83
* IHP
GmbH Frankfurt (Oder)/Germany
[54] V. Issakov, K.L.R. Mertens*, M. Tiebout*, A. Thiede, W. Simbürger**:
Compact quadrature receiver for 24 GHz radar
applications in 0.13 mm CMOS
Electronics Letters, vol.46(2010), no.1, pp.79-80
* Infineon Technologies AG, Villach/Austria
** Infineon Technologies AG, Munich/Germany
[55] A.S. Awny,
A. Thiede, J. Borngräber*, M. Elkhouly*, J.C. Scheytt*:
Speed/Power Performance of D-type Flip-Flops in a 0.13μm
SiGe:C HBT Technology Demonstrated by a 86 GHz Static
Frequency Divider
German Microwave Conference, Berlin/Germany,
2010, pp.24-27
* IHP
GmbH Frankfurt (Oder)/Germany
[56] N. Uddin, A. Thiede:
Integrated Active Sensors for Chip-level Near-Field
Scanning
German Microwave Conference, Berlin/Germany,
2010, pp.28-31
[57] V. Issakov, M. Wojnowski*,
A. Thiede, R. Weigel**:
Considerations on the de-embedding of differential
devices using two-port techniques
International Journal of Microwave and Wireless Technologies,
vol.2(2010), no.3-4, pp. 349-357
*
Infineon Technologies AG, Munich/Germany
**
Friedrich-Alexander University, Erlangen-Nuremberg/Germany
[58] N. Uddin,
A.S. Awny, A. Thiede:
Integrated Active
European Microwave Integrated Circuit Conf.,
Paris/France, 2010, pp.94-97
[59] V.
Issakov, H. Knapp*, W. Bakalski, M. Wojnowski*, A. Thiede, W. Simbürger*:
Compact On-Chip 90_ and 180_ Splitters/Combiners in
Silicon Technology for 24 GHz Applications
European Microwave Conf., Paris/France,
2010, pp.1214-1217
[60] A.S. Awny,
A. Thiede, J. Scheytt*:
Design and Test of Decision Feedback Equalizers for
80 Gbit/s Bit Rate and Beyond
IEEE International Microwave Symposium, Baltimore/US,
2011
* IHP
GmbH Frankfurt (Oder)/Germany
[61] A. Thiede, A.S. Awny,
V. Issakov, N. Uddin:
Hochgeschwindigkeitsschaltkreise
für Optoelektronik und Sensorik
Invited Talk, AustroChip
2011, Vienna
[62] N. Uddin,
A. Thiede:
Switchable Double-Sensor Integrated Active Probe for
Near-Field Scanner
European Microwave Integrated Circuit Conf.,
Manchester/UK, 2011, pp.37-40
[63] A. Awny,
A. Thiede, C. Wipf*, J.C. Scheytt*:
Broadband 31-65 GHz Inductorless
Active BALUN with 12.4 dB Gain in 0.13 µm SiGe:C
BiCMOS Technology
European Microwave Integrated Circuit Conf., Manchester/UK, 2011, pp.652-655
*IHP
Frankfurt (Oder)/Germany
[64] A. Thiede, N. Uddin,
A.S. Awny:
Integrated Active Miniature Sensors for
Electro-Magnetic Near Field Measurement,
Asia-Pacific Symposium on Electromagnetic
Compatibility, Singapore, 2012, pp.197-200
[65] L. Moeller*, A. Awny**, J. Junio***, C. Bolle*, C. Scheytt, A. Thiede:
80 Gb/s Decision Feedback Equalizer for Intersymbol Interference Limited Channels
Optical Fibre Conference,
Anaheim/USA, 2013
*Bell Labs, Alcatel-Lucent Holmdel-Keyport/United
States
**IHP Frankfurt (Oder)/Germany
***Massachusetts Institute of Technology,
Cambridge/USA
[66] U. Ali,
A. Thiede:
A Millimeter Wave Quad-Phase Ring Oscillator using 0.13
μm SiGe BiCMOS HBT Technology,
International Semiconductor Conference
Dresden-Grenoble, Dresden/Germany, 2013
[67] A. Awny*,
L. Moeller**, J. Junio***, J.C. Scheytt, A. Thiede:
Design and Measurement Techniques for an 80 Gb/s 1-Tap
Decision Feedback Equalizer
IEEE-Journal of Solid-State Circuits, vol.49(2014),
no.2, pp.452-470
*IHP Frankfurt (
**Bell Labs, Alcatel-Lucent Holmdel-Keyport/United
States
***Massachusetts Institute of Technology,
Cambridge/USA
[68] U. Ali,
A. Awny*, M. Bober, G. Fischer*, A. Thiede:
High Speed Static Frequency Divider Design with 111.6
GHz Self-Oscillation Frequency (SOF) in 0.13 μm SiGe BiCMOS Technology,
German Microwave Conf., Nuremberg/Germany, 2015,
pp.241-243
* IHP,
Frankfurt (Oder)/Germany
[69] U. Ali, G. Fischer*,
A. Thiede:
Low Power Fundamental VCO Design in D-band Using 0.13 μm SiGe BiCMOS
Technology
German Microwave Conf., Nuremberg/Germany, 2015,
pp.359-362
* IHP,
Frankfurt (Oder)/Germany
[70] U. Ali, M. Bober, A. Thiede,
S. Wagner*:
100-166 GHz Wide Band High Speed Digital Dynamic
Frequency Divider Design in 0.13 μm SiGe BiCMOS
Technology
European Microwave Integrated Circuit Conf.,
Paris/France, 2015, pp.73-76
*
Fraunhofer IAF, Freiburg/Germany
[71] J. A. Russer*,
N. Uddin**,
A. S. Awny***,
A. Thiede,
P. Russer*:
Near-Field Measurement of Stochastic Electromagnetic Fields
IEEE Electromagnetic Compatibility Magazine, vol.4(2015), no.3, pp.79-85
*Institute
for Nanoelectronics,
Technische Universität München, Munich/Germany
** now
with Silicon Radar GmbH, Frankfurt (Oder)/Germany
*** now
with IHP, Frankfurt
(Oder)/Germany
[72] U. Ali, M. Bober, A. Thiede:
An Integrated 118.4 to122 GHz Low Noise Phase Locked Loop (PLL) in 0.13 μm SiGe BiCMOS Technology
German Microwave Conf., Bochum/Germany, 2016,
pp.282-285
[73] A. Mukherjee,
A. Widhalm*,
N. Sharma*,
D. Reuter*,
A. Thiede,
A. Zrenner*:
Hybrid approach towards ultrafast coherent electric
control of quantum dots
International Conference on Quantum Dots, Jeju/Korea, 2016, PW-055, p.335
*Universität
Paderborn, Department Physik
[74] U. Ali, M. Bober,
A. Thiede:
Design of Voltage Controlled Oscillators (VCOs) in
D-Band and their Phase Noise Measurements using Frequency Down Conversion
European Microwave Integrated Circuit Conf., London/UK,
2016, pp.317-320
[75] T. Meister*,
F. Ellinger*, J.W. Bartha*, M. Berrothxv
, J. BurghartzII xv ,
M. Claus*, L. Frey§, A. Gagliardixii
, M. Grundmannxiii ,
J. Hesselbarthxv , H. Klauk††, K. Leo*, P. Luglixii , S. Mannsfeld*,
Y. Manoli**, R. Negra‡‡,
D. Neumaierx , U. Pfeiffer†,
T. Riedl†, S. Scheinertxi , U. Scherf†,
A. Thiedexiv , G. Troster‡, M. Vossiek§,
R. Weigel§, C. Wenger¶, G. AlaviII xv , M. Bechererxii , C.A. Chavarin¶,
M. Darwishxii , M. Ellinger§,
C.-Y. Fan‡‡, M. Fritsch†, F. Grotjahnxiv , M. Gunia*,
K. Haase*, P. Hillger†,
K. Ishida*, M. Jank§, S. Knobelspies‡, M. Kuhl**, G. Lupina¶, S.M. Naghadeh*,
N. Munzenrieder‡, S. Ozbekxv , M. Rastehxv
, G.A. Salvatore‡, D. Schrufer§,
C. Strobel*, M. Theisen†, C. Tuckmantel†,
H.v. Wencksternxiii
, Z. Wangx , Z. Zhangxiii:
Program FFlexCom – High Frequency Flexible Bendable Electronics for
Wireless Communication Systems
International Conference on Microwaves, Antennas,
Communications and Electronic Systems (COMCAS), Tel-Aviv/Israel, 2017
*
Technische Universität Dresden/Germany, † Bergische Universität
Wuppertal/Germany, ‡ ETH Zürich/Switzerland,
§ Friedrich-Alexander Universität
Erlangen-Nürnberg/Germany, ¶ IHP, Frankfurt Oder/Germany, II
IMS CHIPS – Stuttgart/Germany, ** Albert-Ludwigs-Universität Freiburg/Germany,
††
Max-Planck-Institut für Festkörperforschung/Germany, ‡‡ RWTH
Aachen/Germany,
x
AMO GmbH – Aachen/Germany, xi Technische Universität
Ilmenau/Germany,
xii
Technische Universität München/Germany, xiii Universität
Leipzig/Germany,
xiv
Universität Paderborn/Germany, xv Universität Stuttgart/Germany
[76] A. Widhalm*,
A. Mukherjee*, S. Krehs*, N. Sharma*, P. Kölling*,
A. Thiede, D. Reuter*,
J. Förstner,
A. Zrenner*:
Ultrafast electric phase control of a single exciton
qubit
Appl.
Phys. Letters, vol.112(2018), 111105
*Universität
Paderborn, Department Physik
[77] O. Lahr*, Z. Zhang*,
F. Grotjahn, P. Schlupp*, S. Vogt*,
H. v. Wenckstern*, A. Thiede, M. Grundmann*:
Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs
IEEE-Trans. on Electron Devices, vol.66(2019), no.8,
pp.3376-3381
*
Universität Leipzig/Germany
[78] A. Widhalm*, A. Mukherjee*,
S. Krehs*, B. Jonas*, K. Spychala*,
J. Förstner, A. Thiede, D. Reuter*,
A. Zrenner*:
Ultrafast electric control of a single QD exciton
11th International Conference on Quantum Dots,
Munich/Germany, 2020
*Universität
Paderborn, Department Physik
[79] A. Mukherjee*, A. Widhalm*,
D. Siebert*, S. Krehs*, N. Sharma*, A. Thiede, D. Reuter*,
J. Förstner, A. Zrenner*:
Electrically controlled rapid adiabatic passage in a
single quantum dot
Appl.
Phys. Letters, vol.116(2020), 251103
*Universität
Paderborn, Department Physik
[80] A. Widhalm*, S. Krehs*,
D. Siebert, N.L. Sharma*, T. Langer*, B. Jonas*,
D.*Reuter*, A. Thiede, J. Förstner,
A. Zrenner*:
Optoelectronic sampling of ultrafast electric
transients with single quantum dots
Appl. Phys. Letters, vol.119(2021), 181109
*Universität
Paderborn, Department Physik