| Institut(e): | Institut für Angewandte Physik der Universität Bonn
Wegelstr. 8 D-53115 Bonn Germany Tel: +49-228-733475 (Büro) und +49-228-733484 (Labor) Fax: +49-228-733474 |
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| Projektleiter: | Prof. Dr. Dieter Meschede | meschede@iap.uni-bonn.de |
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| Mitarbeiter: | Dr. Ulrich Rasbach | rasbach@iap.uni-bonn.de |
| Abstract: In this research programme we want to investigate whether we can manufacture a photonic crystal from an (InAl)As or equivalent material through direct growth processes. We want to achieve the modulation of the index of refraction through a density modulation of the Indium concentration which is induced by methods of atomic nano-fabrication (ANF). The length scale accessible by this method is 205 nm or longer and corresponds to typical wavelengths ~ 700 nm or longer, i.e. visible to near infrared wavelengths within the material. This method could make the fabrication of III-V semiconductor compounds with 3D modulation of its composition and hence also index of refraction possible. The full 3D modulation capability of this direct deposition method is a unique promise among nanofabrication concepts for opaque materials. |
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